Sr Staff GaN Device Engineer

Device Engineering San Jose, California




  • Design and qualify high voltage power devices for power conversion.
  • Evaluate electrical/thermal performance and reliability of power devices as part of Company’s products.
  • Assignments will include power device creation, fabrication and full characterization, providing device documentation and technical reports.
  • Interact with other departments for best use of Company’s technologies and to support key customer requirements
  • Participate in the development of world-class high-voltage power devices and analog/mixed signal process technologies in a fabless environment
  • Characterize high-voltage power devices, low and medium voltage MOSFETs, bipolars and other analog components using automated and manual testers.
  • Analyze characterization data using statistical data analysis tools
  • Establish correlation between manual and automated tester data for PCM development
  • Perform device/process simulations and device layout as part of new technology development


  • B. Sc Degree in Electrical Engineering with 8 years' working experience or
  • M. Sc Degree in Electrical Engineering with 6 years' working experience or
  • Ph. D Degree in Electrical Engineering with 3 years' working experience
  • Sound understanding of semiconductor physics
  • Hands-on experience with high-voltage wide-bandgap technologies, including GaN and SiC power device design, fabrication and qualification.
  • Proven track record of independently designing and taking into volume fabrication high-voltage semiconductor power switching devices
  • Proficiency with TCAD tools and familiar with CADENCE layout and simulation tools
  • Hand-on experience with high voltage testing and data acquisition systems
  • Good communication and documentation skills
Salary Range: USD150k to USD190k + RSUs