OMNIVISION Careers

Description

• Conduct CMOS Imaging technology development through detailed scientific characterization.
• Perform complete electrical and optical characterization of various CMOS image sensors and debug problems on new and existing pixel designs.
• Perform pixel layout/process design for next generation CMOS sensors by characterizing performance of various experimental layouts and process conditions and work with process integration/layout design and process simulation team to characterize new designs/process and suggest new process experiments based on characterization data.
• Act as primary feedback source to various inter-disciplinary teams for silicon data on various pixel designs and process designs; Work with production, QA teams to solve yield issues related to pixel performance.
• Work with test engineering team to develop automated wafer-level characterization programs.

• CMOS Image Sensor (“CIS”) pixel characterization, with hands-on experience in accurately assessing pixel performance.
• Next generation pixel structure technology - characteristics estimation, including White pixel, RN, FPN, Dot line, Sensitivity, Full well capacity (FWC) and bit line settling.
• Characterization and fine tuning method development -VFPN in bright condition, NL, row banding, color banding, TX high period; Pixel parameter optimization (Bias current/voltage, control timing, Transistor (Tr.) size, Vth and Gox); Circuit parameter optimization (Bias current/voltage, control timing and Tr. size).
• Trouble shooting - Row banding, Color banding, NL and DINU.
• End-to-end process development for image sensors, from conceptualization to final implementation, ensuring optimal functionality and performance.