Principal / Sr. Principal Engineer – Pathfinding: NAND Cell Device
Description
Job Title : Principal / Sr. Principal Engineer – Pathfinding: NAND Cell Device
Location : Sacramento or San Jose CA
Job Type : Full-Time
In the rapidly growing NAND Flash space amid the era of big data, this is an exciting time to be at SK hynix NAND America. SK Hynix NAND America is looking for a talent that has a strong background and experiences on NAND Cell Device Engineering. The candidate will be working in NAND pathfinding team to develop the next generation NAND technology.
Key Responsibilities:
Joining us as a Sr Principal/Principal NAND Cell Device Engineer, you will play a pivotal role in driving innovation in the development of 3D NAND technology. Your responsibilities will include:
- Exploring novel cell structures, device operations, and algorithms for the next-generation industry leading NAND flash in cost, performance, and reliability. By stretching out your expertise in NAND cell device, define critical cell behaviors to limit the electrical targets of the future nodes and propose innovative technical paths to overcome scaling barriers of future-node NAND cells.
- Generating intellectual concepts and properties to overcome technical challenges in the development of next-generation flash memories.
- Exploring advanced cell array trims and operation algorithms (bias, step, waveform, etc.) for the world class cell reliability and performance in the next generation NAND flash memory.
- Performing hands-on NAND array characterization, data analysis, and modeling to reveal the root-causes behind the device phenomena based on device physics and give clear directions to cell development.
- Collaborating with diverse teams in simulation, process development, circuit design, media architecture, and Hi reliability to meet product requirements.
- Taking on a mentorship role by guiding and instructing junior engineers while ensuring timely technology delivery.
Minimum Qualifications:
- 15+ years of relevant experience with Ph.D or Master degree in electrical engineering or other related fields to semiconductor devices
- 10+ years of direct experience in NAND device engineering in field of cell array characterization, trims and algorithm development, and NAND cell development as device engineers in collaborations with other functional groups
- Strong expertise in NAND device physics, operation, and electrical characterization
- General understanding in NAND circuit operation, process and integration
- Familiarity with test script languages of C++/Python and statistical data analysis using Spotfire and Jumptools such as Spotfire and jmp
- Effective communication skills and a collaborative mindset
- Demonstrated innovation and creativity
Benefits:
- The base salary range for this full-time position is: $182,000 - $257,000.
- Individual pay is determined by work location and additional factors, including job-related skills, experience, and relevant education or training.
- Additional compensation may include annual bonuses, discretionary bonuses and benefits.
- The benefits include the following.
- We provide top-class healthcare benefits including medical, dental, vision, employee assistance plans for employees and their dependents.
- We provide multiple leave types, including paid time off, 11 holidays, 12 Happy Fridays (additional days off), and family and medical leaves.
- We provide market-competitive retirement programs (401(k) plans) for your future.
Equal Employment Opportunity:
SKHYA is an Equal Employment Opportunity Employer. We provide equal employment opportunities to all qualified applicants and employees and prohibit discrimination and harassment of any type without regard to race, sex, pregnancy, sexual orientation, religion, age, gender identity, national origin, color, protected veteran or disability status, genetic information or any other status protected under federal, state, or local applicable laws.