Senior Staff / Staff Engineer – GaN Technologist, Technology Development
Description
Company Description
At Power Integrations, we develop innovative semiconductor technologies that power energy-efficient solutions used around the world. From consumer electronics and industrial applications to electric vehicles and renewable energy systems, our products help customers solve increasingly complex power conversion challenges.
Our technologies make electronic devices and energy systems more efficient worldwide. Employees collaborate with talented engineers, business leaders, and operations teams on products that directly affect our customers and our business.
Motivation for Job
Power Integrations is seeking an experienced Senior Staff / Staff Engineer – GaN Technologist to drive the development of next-generation high-voltage gallium nitride (GaN) technologies for power conversion applications. This role offers the opportunity to shape the future of lateral GaN HEMT platforms by advancing device performance, manufacturability, reliability, and scalability across multiple voltage classes. As a recognised technical leader, you will influence technology roadmaps, contribute to innovation strategy, and help bring cutting-edge semiconductor technologies from concept through high-volume production.
Job Description
In this highly visible technical leadership role, you will lead the development and optimisation of high-voltage GaN HEMT technologies that enable industry-leading power semiconductor products. You will be responsible for defining new device concepts, evaluating technology trade-offs, and guiding development activities that improve device performance, reliability, and manufacturability.
Working closely with process integration, product development, reliability, packaging, and manufacturing teams across global locations, you will support technology transfer into production and help establish future generations of GaN-based power devices. The role requires deep expertise in semiconductor device physics, technology development, and cross-functional technical leadership.
Specific Responsibilities
- Lead the development and optimisation of high-voltage GaN HEMT technologies for commercial power semiconductor products.
- Define and execute technology development roadmaps for future generations of GaN-based devices.
- Improve key device performance metrics, including specific RDS(on), breakdown voltage, switching performance, robustness, and long-term reliability.
- Analyse device physics, reliability behaviour, and failure mechanisms to identify opportunities for technology advancement.
- Collaborate with process integration teams to develop, qualify, and scale new device architectures and fabrication processes.
- Support technology transfer from research and development into product development and high-volume manufacturing.
- Guide silicon validation, device characterisation, and technology qualification activities.
- Develop and utilise TCAD simulations and analytical models to optimise device performance and technology direction.
- Contribute to patent generation, intellectual property development, and internal technical publications.
- Mentor engineers and provide technical leadership across cross-functional development teams.
Skills Required
- Deep expertise in high-voltage GaN HEMT device physics, operation, and technology development.
- Strong understanding of semiconductor process integration, device characterisation, reliability engineering, and failure analysis.
- Experience interpreting electrical, physical, and reliability data to drive technology improvements.
- Proficiency with TCAD simulation tools and advanced device modelling techniques.
- Strong problem-solving, project leadership, and cross-functional collaboration skills.
- Excellent written and verbal communication skills, with the ability to influence technical direction.
Background Desired
- Ph.D. or M.S. in Electrical Engineering, Physics, Materials Science, or a related field.
- 10+ years of experience in semiconductor device development, including substantial experience with GaN technologies.
- Demonstrated success developing, characterising, and qualifying GaN power semiconductor technologies.
- Experience with lateral high-voltage GaN technologies (>650V).
- Knowledge of HV BCD process development, design rule definition, and ESD protection methodologies.
- Familiarity with power conversion applications and system-level implications of semiconductor device technology.
- Proven track record of patents, publications, and recognised technical contributions within the semiconductor industry.
- Experience working with external foundries and technology development partners.
Total Rewards Statement
Power Integrations is committed to building teams that drive innovation and therefore review a range of factors when determining compensation. The annual base pay range for this position is $140,000 to $180,000. Our salary ranges are determined by role, level, qualifications and work location.
The range displayed on the job posting reflects the minimum and maximum target for new hire salaries for this position in California. Within the range, individual pay is determined by additional factors, including job-related skills, experience, and relevant education or training.
Power Integrations also offers to our eligible employees a comprehensive total rewards package that includes equity, medical benefits, ESPP, 401(k), tuition reimbursement and time-off programmes. For additional benefits, please visit https://www.power.com/company/our-sustainability-priorities/people-our-engine-innovation.
Disclaimer
We may use artificial intelligence (AI) tools to support parts of the hiring process, such as reviewing applications, analyzing resumes, or assessing responses. These tools assist our recruitment team but do not replace human judgment. Final hiring decisions are ultimately made by humans. If you would like more information about how your data is processed, please contact us.